Khawla S. khashan; Evan T. Salem; Mukaram A. Fakhery
Abstract
In the present work, the response time of p-n junction photo-detector has been achieved by using the rapid thermalannealing (RTA) technique in which the annealing time has been ranged ...
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In the present work, the response time of p-n junction photo-detector has been achieved by using the rapid thermalannealing (RTA) technique in which the annealing time has been ranged from (5-25) s at (773 K) the result shows a goodimprovement in the time constant of the detector and it has beast result at (15) s which reach to (26.81) ns for (905) nmwavelength of GaAlAs laser